Boron-11 Isotope With Natural Abundance Of 80.22% Cas No.14798-13-1

Boron-11 Isotope With Natural Abundance Of 80.22% Cas No.14798-13-1

With negligible neutron absorption, ¹¹B acts as a p-type dopant to precisely tune the electrical conductivity of semiconductor devices and strengthen their radiation resistance and anti-interference performance. BoronHub provides ¹¹B products with flexibly adjustable isotope enrichment to satisfy differentiated doping precision requirements across various semiconductor manufacturing nodes. Sealed packaging filled with high-purity inert gas guarantees chemical stability and consistent batch performance. Our fully self-reliant supply chain enables steady supply from research-scale lots to industrial mass production, serving advanced-node chips, display panels and quantum chip R&D.

Isotope¹¹B Enterprise Specification

 Package:Packed in polytetrafluoroethylene bottle, filled with inert gas protection, 50g/bottle;

What are the Professional Uses & Application Fields of Boron-11 (¹¹B)?

Boron-11 (¹¹B) is the stable heavy isotope of boron with a natural abundance of 80.22%. Characterized by neutron transparency, no radiation activation, ultra-high purity and excellent homogeneity, it serves as an irreplaceable core raw material for high-end semiconductors and advanced electronic materials.

I. Core Application Field: Semiconductor & Integrated Circuit Manufacturing

1. P-Type Dopant for Silicon-Based Materials (Primary Application)

Acts as a high-purity P-type doping source for ion implantation and high-temperature diffusion processes on silicon wafers, epitaxial wafers and SOI wafers.

Optimizes ion arrangement within silicon lattices to improve conductive uniformity, breakdown voltage and structural stability of semiconductor materials.

2. Fabrication of High-End Chips & Micro-Devices

Applied to advanced-node logic chips, memory chips and micro-sensors with process nodes of 7 nm, 5 nm and below.

Enables stable mass production of high-density integrated circuits, MEMS devices and power devices.

 

3. Radiation-Hardened Semiconductor Devices

Greatly enhances chips’ resistance to neutron irradiation and cosmic ray interference, lowering the risk of radiation-induced failure.

Widely adopted in aerospace semiconductors, military-grade chips and high-reliability automotive ICs.

4. Semiconductor Diffusion Sources & Epitaxy Precursors

Used to synthesize high-purity gaseous diffusion sources and epitaxial doping precursors such as BCl₃ and BBr₃.

Delivers precise and controllable doping concentrations to meet process standards of premium wafer fabs.

II. Extended High-End Application Fields

1.Power semiconductors / IGBTs / power modules: Improves high-temperature stability and voltage withstand capacity for new energy vehicles, photovoltaic inverters and industrial power supplies.

2.RF & analog chips: Reduces noise and enhances signal stability for communication base stations, satellite terminals and high-precision instruments.

 

3.Optoelectronic components & detectors: Optimizes dark current suppression and long-term operational reliability for image sensors and laser driver ICs.

4.Advanced packaging & substrate materials: Serves as a doping element for substrate modification of third-generation semiconductors including silicon carbide (SiC) and gallium nitride (GaN).

III. Core Advantages of UrbanMines Boron-11 Products

Crystal form: Cubic β-rhombohedral crystal structure with high compactness and minimal impurities

Purity: Semiconductor-grade ultra-high purity with metallic impurities controlled at ppb level

Isotope abundance: Customizable grades available, including natural abundance (80.22%) and highly enriched boron-11

Compatibility: Uniform doping performance, readily bonds with silicon and metals; free of particle agglomeration and neutron radiation interference

Product positioning: Essential critical raw material for advanced-node chips, high-reliability semiconductors and radiation-resistant electronic devices